Name: solar grade mono c-Si ingot
-Type: 6’’inch(Φ152mm)、8’’inch(Φ203mm)
-Brief introduction:

technical specification

GrowthMethod

CZ

Dopant

Boron

Crystal Orientation

100±2°

Oxygen

≤1.0×1018 atoms/cm3

Carbon

≤5.0×1016 atoms/cm3

Lifetime

＞10μs

Resistivity

0.5-3Ω.cm 3-6Ω.cm

Dislocation

≤2000/cm2

Note：Fragile. Pls Handle with care.